AsianScientist (Oct. 31, 2011) – Micron Technology, Inc. and Singapore’s A*STAR Data Storage Institute (DSI) will collaborate on the development of spin transfer torque magnetic random access memory (STT-MRAM), a promising alternative non-volatile memory technology for next-generation storage.
Details of the announcement, which was made on Friday by the two companies, include joint research to develop high-density STT-MRAM devices during the next three years.
SSDs, unlike hard disk drives (HDDs), contain no moving parts and are less susceptible to physical shock and vibration than HDDs. SSDs are also capable of retaining their memory without power and are very durable.
Current commercial solid state drives (SSDs) use NAND Flash memory, a type of non-volatile memory, to store data, and demand for these types of drives has been increasing rapidly. However, as the memory industry continues to scale NAND Flash memory, it sees issues such as limited endurance and high write power.
“Micron is actively working on multiple emerging memory development programs, and we are pleased to collaborate with DSI to explore the potential of STT-MRAM,” said Scott DeBoer, Micron Vice President of Research and Development.
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Source: A*STAR.
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